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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch QFET Logic Level
- FQD19N10LTM
- onsemi
-
1:
$1.76
-
30,013En existencias
|
N.º de artículo de Mouser
512-FQD19N10LTM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch QFET Logic Level
|
|
30,013En existencias
|
|
|
$1.76
|
|
|
$0.836
|
|
|
$0.746
|
|
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$0.746
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|
Min.: 1
Mult.: 1
Máx.: 160
:
2,500
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|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
15.6 A
|
100 mOhms
|
- 20 V, 20 V
|
1 V
|
18 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
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|
Reel, Cut Tape, MouseReel
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V P-Channel QFET
- FQD8P10TM
- onsemi
-
1:
$1.34
-
15,772En existencias
|
N.º de artículo de Mouser
512-FQD8P10TM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V P-Channel QFET
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15,772En existencias
|
|
|
$1.34
|
|
|
$0.625
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|
|
$0.555
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|
|
$0.555
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|
Min.: 1
Mult.: 1
Máx.: 270
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
100 V
|
6.6 A
|
530 mOhms
|
- 30 V, 30 V
|
4 V
|
15 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
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|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V N-Ch adv QFET V2 Series
- FQD18N20V2TM
- onsemi
-
1:
$2.15
-
21,886En existencias
|
N.º de artículo de Mouser
512-FQD18N20V2TM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V N-Ch adv QFET V2 Series
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|
21,886En existencias
|
|
|
$2.15
|
|
|
$1.04
|
|
|
$0.811
|
|
|
$0.811
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|
Min.: 1
Mult.: 1
Máx.: 120
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
200 V
|
15 A
|
140 mOhms
|
- 30 V, 30 V
|
3 V
|
26 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V P-Channel QFET
- FQB34P10TM
- onsemi
-
1:
$4.35
-
9,124En existencias
|
N.º de artículo de Mouser
512-FQB34P10TM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V P-Channel QFET
|
|
9,124En existencias
|
|
|
$4.35
|
|
|
$2.22
|
|
|
$2.02
|
|
|
$1.60
|
|
|
$1.60
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|
Min.: 1
Mult.: 1
Máx.: 800
:
800
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
P-Channel
|
1 Channel
|
100 V
|
33.5 A
|
60 mOhms
|
- 25 V, 25 V
|
4 V
|
110 nC
|
- 55 C
|
+ 175 C
|
3.75 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH/600V/2A/A.QFET
- FQD2N60CTM
- onsemi
-
1:
$1.48
-
11,764En existencias
|
N.º de artículo de Mouser
512-FQD2N60CTM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH/600V/2A/A.QFET
|
|
11,764En existencias
|
|
|
$1.48
|
|
|
$0.693
|
|
|
$0.617
|
|
|
$0.482
|
|
|
$0.478
|
|
|
$0.364
|
|
Min.: 1
Mult.: 1
Máx.: 2,500
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
1.9 A
|
3.6 Ohms
|
- 30 V, 30 V
|
2 V
|
12 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V N-Channel Advance Q-FET
- FQPF19N20C
- onsemi
-
1:
$2.35
-
3,559En existencias
|
N.º de artículo de Mouser
512-FQPF19N20C
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V N-Channel Advance Q-FET
|
|
3,559En existencias
|
|
|
$2.35
|
|
|
$1.15
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
Máx.: 150
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
200 V
|
19 A
|
170 mOhms
|
- 30 V, 30 V
|
2 V
|
53 nC
|
- 55 C
|
+ 150 C
|
43 W
|
Enhancement
|
QFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) -150V P-Channel QFET
- FDMC2523P
- onsemi
-
1:
$2.64
-
4,515En existencias
|
N.º de artículo de Mouser
512-FDMC2523P
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) -150V P-Channel QFET
|
|
4,515En existencias
|
|
|
$2.64
|
|
|
$1.34
|
|
|
$1.16
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
Máx.: 290
:
3,000
|
|
|
Si
|
SMD/SMT
|
Power-33-8
|
P-Channel
|
1 Channel
|
150 V
|
3 A
|
1.5 Ohms
|
- 30 V, 30 V
|
5 V
|
9 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
QFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V P-Channel QFET
- FQD7P20TM
- onsemi
-
1:
$1.91
-
10,445En existencias
-
7,500Se espera el 3/9/2026
|
N.º de artículo de Mouser
512-FQD7P20TM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V P-Channel QFET
|
|
10,445En existencias
7,500Se espera el 3/9/2026
|
|
|
$1.91
|
|
|
$0.912
|
|
|
$0.775
|
|
|
$0.644
|
|
|
$0.644
|
|
Min.: 1
Mult.: 1
Máx.: 590
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
200 V
|
5.7 A
|
690 mOhms
|
- 30 V, 30 V
|
5 V
|
25 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH/900V/7A/A.QFET
- FQAF11N90C
- onsemi
-
1:
$5.88
-
234En existencias
-
Pedido especial de fábrica
|
N.º de artículo de Mouser
512-FQAF11N90C
Pedido especial de fábrica
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH/900V/7A/A.QFET
|
|
234En existencias
|
|
|
$5.88
|
|
|
$3.34
|
|
|
$3.33
|
|
|
Ver
|
|
|
$3.11
|
|
|
$2.92
|
|
|
$2.85
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-3PF-3
|
N-Channel
|
1 Channel
|
900 V
|
7.2 A
|
1.1 Ohms
|
- 30 V, 30 V
|
3 V
|
80 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
QFET
|
Tube
|
|
