|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R125CFD7XKSA1
- Infineon Technologies
-
1:
$4.76
-
1,000En existencias
|
N.º de artículo de Mouser
726-IPP60R125CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,000En existencias
|
|
|
$4.76
|
|
|
$2.45
|
|
|
$2.06
|
|
|
$1.91
|
|
|
$1.79
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
125 mOhms
|
- 20 V, 20 V
|
3.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R180P7XKSA1
- Infineon Technologies
-
1:
$3.06
-
5,606En existencias
|
N.º de artículo de Mouser
726-IPP60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
5,606En existencias
|
|
|
$3.06
|
|
|
$1.55
|
|
|
$1.39
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP65R095C7XKSA1
- Infineon Technologies
-
1:
$6.55
-
1,092En existencias
|
N.º de artículo de Mouser
726-IPP65R095C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,092En existencias
|
|
|
$6.55
|
|
|
$3.47
|
|
|
$3.17
|
|
|
$3.10
|
|
|
$2.75
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
84 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
$5.65
-
1,093En existencias
|
N.º de artículo de Mouser
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
1,093En existencias
|
|
|
$5.65
|
|
|
$3.76
|
|
|
$2.69
|
|
|
$2.41
|
|
|
$2.25
|
|
|
$2.25
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R040CFD7XKSA1
- Infineon Technologies
-
1:
$9.82
-
787En existencias
|
N.º de artículo de Mouser
726-IPW60R040CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
787En existencias
|
|
|
$9.82
|
|
|
$5.77
|
|
|
$5.65
|
|
|
$5.03
|
|
|
$4.70
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
50 A
|
40 mOhms
|
- 20 V, 20 V
|
3.5 V
|
109 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R060C7XKSA1
- Infineon Technologies
-
1:
$9.15
-
915En existencias
|
N.º de artículo de Mouser
726-IPW60R060C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
915En existencias
|
|
|
$9.15
|
|
|
$5.35
|
|
|
$4.51
|
|
|
$4.50
|
|
|
$4.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
35 A
|
52 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
162 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R060P7XKSA1
- Infineon Technologies
-
1:
$8.30
-
849En existencias
-
240En pedido
|
N.º de artículo de Mouser
726-IPW60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
849En existencias
240En pedido
|
|
|
$8.30
|
|
|
$5.45
|
|
|
$4.47
|
|
|
$3.92
|
|
|
$3.51
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R099P7XKSA1
- Infineon Technologies
-
1:
$5.07
-
832En existencias
|
N.º de artículo de Mouser
726-IPW60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
832En existencias
|
|
|
$5.07
|
|
|
$3.07
|
|
|
$2.54
|
|
|
$2.33
|
|
|
$2.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 75A TO247-3 CoolMOS C7
- IPW65R019C7
- Infineon Technologies
-
1:
$21.58
-
775En existencias
|
N.º de artículo de Mouser
726-IPW65R019C7
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 75A TO247-3 CoolMOS C7
|
|
775En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
19 mOhms
|
- 20 V, 20 V
|
3 V
|
215 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 75A TO247-3 CoolMOS C7
- IPW65R019C7FKSA1
- Infineon Technologies
-
1:
$21.42
-
708En existencias
|
N.º de artículo de Mouser
726-IPW65R019C7FKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 75A TO247-3 CoolMOS C7
|
|
708En existencias
|
|
|
$21.42
|
|
|
$13.47
|
|
|
$12.94
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
19 mOhms
|
- 20 V, 20 V
|
3 V
|
215 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZ65R065C7XKSA1
- Infineon Technologies
-
1:
$9.77
-
1,196En existencias
|
N.º de artículo de Mouser
726-IPZ65R065C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,196En existencias
|
|
|
$9.77
|
|
|
$5.81
|
|
|
$4.92
|
|
|
$4.91
|
|
|
$4.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
58 mOhms
|
- 20 V, 20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS
- IPA65R095C7
- Infineon Technologies
-
1:
$7.25
-
242En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPA65R095C7
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS
|
|
242En existencias
|
|
|
$7.25
|
|
|
$4.75
|
|
|
$3.49
|
|
|
$3.11
|
|
|
$2.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
12 A
|
84 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP65R125C7XKSA1
- Infineon Technologies
-
1:
$4.83
-
263En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPP65R125C7XKSA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
263En existencias
|
|
|
$4.83
|
|
|
$2.51
|
|
|
$2.28
|
|
|
$2.25
|
|
|
Ver
|
|
|
$2.14
|
|
|
$2.07
|
|
|
$2.00
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
18 A
|
111 mOhms
|
- 20 V, 20 V
|
3 V
|
35 nC
|
- 55 C
|
+ 150 C
|
101 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPW80R280P7XKSA1
- Infineon Technologies
-
1:
$4.32
-
213En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPW80R280P7XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
213En existencias
|
|
|
$4.32
|
|
|
$2.38
|
|
|
$1.95
|
|
|
$1.63
|
|
|
$1.57
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
280 mOhms
|
- 30 V, 30 V
|
3 V
|
36 nC
|
- 50 C
|
+ 150 C
|
101 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R180C7XKSA1
- Infineon Technologies
-
1:
$3.62
-
148En existencias
-
500Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IPA60R180C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
148En existencias
500Se espera el 2/7/2026
|
|
|
$3.62
|
|
|
$1.82
|
|
|
$1.71
|
|
|
$1.33
|
|
|
$1.24
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
346 mOhms
|
- 20 V, 20 V
|
3.5 V
|
24 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA60R600P7XKSA1
- Infineon Technologies
-
1:
$2.18
-
573En existencias
|
N.º de artículo de Mouser
726-IPA60R600P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
573En existencias
|
|
|
$2.18
|
|
|
$1.14
|
|
|
$0.899
|
|
|
$0.712
|
|
|
Ver
|
|
|
$0.563
|
|
|
$0.537
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 55 C
|
+ 150 C
|
21 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R2K0P7ATMA1
- Infineon Technologies
-
1:
$1.41
-
1,007En existencias
-
2,500Se espera el 28/5/2026
|
N.º de artículo de Mouser
726-IPD80R2K0P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,007En existencias
2,500Se espera el 28/5/2026
|
|
|
$1.41
|
|
|
$0.886
|
|
|
$0.586
|
|
|
$0.457
|
|
|
$0.37
|
|
|
Ver
|
|
|
$0.447
|
|
|
$0.337
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
1.7 Ohms
|
- 20 V, 20 V
|
2.5 V
|
9 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD80R4K5P7ATMA1
- Infineon Technologies
-
1:
$1.22
-
1,608En existencias
-
2,500Se espera el 15/10/2026
|
N.º de artículo de Mouser
726-IPD80R4K5P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
1,608En existencias
2,500Se espera el 15/10/2026
|
|
|
$1.22
|
|
|
$0.62
|
|
|
$0.454
|
|
|
$0.389
|
|
|
$0.288
|
|
|
Ver
|
|
|
$0.342
|
|
|
$0.254
|
|
|
$0.25
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 50 C
|
+ 150 C
|
13 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R1K4P7SATMA1
- Infineon Technologies
-
1:
$0.92
-
4,637En existencias
|
N.º de artículo de Mouser
726-IPN70R1K4P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,637En existencias
|
|
|
$0.92
|
|
|
$0.575
|
|
|
$0.373
|
|
|
$0.286
|
|
|
$0.221
|
|
|
Ver
|
|
|
$0.258
|
|
|
$0.203
|
|
|
$0.187
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
700 V
|
4 A
|
1.15 Ohms
|
- 16 V, 16 V
|
2.5 V
|
4.7 nC
|
- 40 C
|
+ 150 C
|
6.2 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R360P7SATMA1
- Infineon Technologies
-
1:
$1.70
-
118En existencias
-
15,000En pedido
|
N.º de artículo de Mouser
726-IPN70R360P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
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118En existencias
15,000En pedido
Existencias:
118 Se puede enviar inmediatamente
En pedido:
6,000 Se espera el 29/10/2026
9,000 Se espera el 12/11/2026
Plazo de entrega de fábrica:
11 Semanas
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$1.70
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$1.05
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$0.615
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$0.47
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$0.373
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Ver
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$0.428
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$0.349
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Min.: 1
Mult.: 1
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3,000
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Si
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SMD/SMT
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SOT-223-3
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N-Channel
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1 Channel
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700 V
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12.5 A
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300 mOhms
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- 16 V, 16 V
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2.5 V
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16.4 nC
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- 40 C
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+ 150 C
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7.2 W
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Enhancement
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CoolMOS
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Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPN80R4K5P7ATMA1
- Infineon Technologies
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1:
$1.04
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4,651En existencias
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9,000Se espera el 24/12/2026
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N.º de artículo de Mouser
726-IPN80R4K5P7ATMA1
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
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4,651En existencias
9,000Se espera el 24/12/2026
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$1.04
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$0.625
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$0.422
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$0.325
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$0.253
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Ver
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$0.293
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$0.233
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$0.22
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Min.: 1
Mult.: 1
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3,000
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Si
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SMD/SMT
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SOT-223-3
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N-Channel
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1 Channel
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800 V
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1.5 A
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3.8 Ohms
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- 20 V, 20 V
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2.5 V
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4 nC
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- 55 C
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+ 150 C
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6 W
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Enhancement
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CoolMOS
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Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP60R280CFD7XKSA1
- Infineon Technologies
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1:
$3.16
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712En existencias
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N.º de artículo de Mouser
726-IPP60R280CFD7XKS
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
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712En existencias
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$3.16
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$1.57
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$1.42
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$1.18
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$1.03
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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600 V
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9 A
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237 mOhms
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- 20 V, 20 V
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3.5 V
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18 nC
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- 55 C
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+ 150 C
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52 W
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Enhancement
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CoolMOS
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 46A TO220-3 CoolMOS C7
- IPP65R045C7XKSA1
- Infineon Technologies
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1:
$10.14
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184En existencias
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500Se espera el 25/3/2027
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N.º de artículo de Mouser
726-IPP65R045C7XKSA1
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 46A TO220-3 CoolMOS C7
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184En existencias
500Se espera el 25/3/2027
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$10.14
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$6.23
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$5.76
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$5.57
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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650 V
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46 A
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40 mOhms
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- 20 V, 20 V
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3 V
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93 nC
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- 55 C
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+ 150 C
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227 W
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Enhancement
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CoolMOS
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R099C7XKSA1
- Infineon Technologies
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1:
$6.66
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165En existencias
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N.º de artículo de Mouser
726-IPW60R099C7XKSA1
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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165En existencias
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$6.66
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$3.79
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$3.16
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$2.81
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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600 V
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22 A
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85 mOhms
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- 20 V, 20 V
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3 V
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42 nC
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- 55 C
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+ 150 C
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110 W
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Enhancement
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CoolMOS
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R180C7XKSA1
- Infineon Technologies
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1:
$4.62
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197En existencias
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N.º de artículo de Mouser
726-IPW60R180C7XKSA1
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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197En existencias
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$4.62
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$2.56
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$2.10
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$1.76
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$1.72
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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600 V
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13 A
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180 mOhms
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- 20 V, 20 V
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3 V
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24 nC
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- 55 C
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+ 150 C
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68 W
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Enhancement
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CoolMOS
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Tube
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