FGHL60T120RWD

onsemi
863-FGHL60T120RWD
FGHL60T120RWD

Fabricante:

Descripción:
IGBTs 1200V, 60A Trench Field Stop VII (FS7) Discrete IGBT

Hoja de datos:
Modelo ECAD:
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En existencias: 367

Existencias:
367 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
9 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$10.18 $10.18
$6.04 $60.40
$5.39 $539.00

Atributo del producto Valor de atributo Seleccionar atributo
onsemi
Categoría de producto: IGBTs
RoHS:  
REACH - SVHC:
Si
TO-247-3
Through Hole
Single
1.2 kV
20 V
120 A
833 W
- 55 C
+ 175 C
FGHL60T120RWD
Tube
Marca: onsemi
Corriente de fuga puerta-emisor: 400 nA
Tipo de producto: IGBT Transistors
Cantidad de empaque de fábrica: 450
Subcategoría: IGBTs
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

FGHL60T120RWD 1200V 60A Discrete IGBT

onsemi FGHL60T120RWD 1200V 60A Discrete IGBT uses advanced 7th-generation IGBT technology and is housed in a TO247 3-lead package. The onsemi FGHL60T120RWD delivers high performance, low conduction losses, and excellent switching control. The device is ideal for efficient operation in applications like motor control, UPS, data centers, and high-power switches.

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