|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R185P7AUMA1
- Infineon Technologies
-
1:
$3.07
-
4,395En existencias
|
N.º de artículo de Mouser
726-IPL60R185P7AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
4,395En existencias
|
|
|
$3.07
|
|
|
$1.99
|
|
|
$1.37
|
|
|
$1.11
|
|
|
$1.01
|
|
|
Ver
|
|
|
$1.06
|
|
|
$0.985
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
149 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN60R600P7SATMA1
- Infineon Technologies
-
1:
$1.14
-
5,890En existencias
|
N.º de artículo de Mouser
726-IPN60R600P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
5,890En existencias
|
|
|
$1.14
|
|
|
$0.753
|
|
|
$0.495
|
|
|
$0.389
|
|
|
$0.301
|
|
|
Ver
|
|
|
$0.342
|
|
|
$0.26
|
|
|
$0.25
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 40 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R060P7XKSA1
- Infineon Technologies
-
1:
$6.36
-
596En existencias
-
7,000En pedido
|
N.º de artículo de Mouser
726-IPP60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
596En existencias
7,000En pedido
Existencias:
596 Se puede enviar inmediatamente
En pedido:
500 Se espera el 23/7/2026
6,500 Se espera el 22/10/2026
Plazo de entrega de fábrica:
19 Semanas
|
|
|
$6.36
|
|
|
$3.87
|
|
|
$3.27
|
|
|
$2.90
|
|
|
$2.57
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R024P7XKSA1
- Infineon Technologies
-
1:
$13.18
-
517En existencias
|
N.º de artículo de Mouser
726-IPW60R024P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
517En existencias
|
|
|
$13.18
|
|
|
$7.95
|
|
|
$6.92
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
101 A
|
24 mOhms
|
- 20 V, 20 V
|
3.5 V
|
164 nC
|
- 55 C
|
+ 150 C
|
291 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R099P7XKSA1
- Infineon Technologies
-
1:
$5.07
-
832En existencias
|
N.º de artículo de Mouser
726-IPW60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
832En existencias
|
|
|
$5.07
|
|
|
$3.07
|
|
|
$2.54
|
|
|
$2.33
|
|
|
$2.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R160P7XKSA1
- Infineon Technologies
-
1:
$3.14
-
366En existencias
|
N.º de artículo de Mouser
726-IPA60R160P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
366En existencias
|
|
|
$3.14
|
|
|
$2.03
|
|
|
$1.45
|
|
|
$1.21
|
|
|
Ver
|
|
|
$1.12
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
374 mOhms
|
- 20 V, 20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA60R600P7XKSA1
- Infineon Technologies
-
1:
$2.18
-
573En existencias
|
N.º de artículo de Mouser
726-IPA60R600P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
573En existencias
|
|
|
$2.18
|
|
|
$1.14
|
|
|
$0.899
|
|
|
$0.712
|
|
|
Ver
|
|
|
$0.563
|
|
|
$0.537
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 55 C
|
+ 150 C
|
21 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPAN60R180P7SXKSA1
- Infineon Technologies
-
1:
$2.57
-
778En existencias
|
N.º de artículo de Mouser
726-IPAN60R180P7SXKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
778En existencias
|
|
|
$2.57
|
|
|
$1.26
|
|
|
$1.13
|
|
|
$0.97
|
|
|
$0.772
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
340 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R045P7XKSA1
- Infineon Technologies
-
1:
$8.66
-
251En existencias
|
N.º de artículo de Mouser
726-IPW60R045P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
251En existencias
|
|
|
$8.66
|
|
|
$5.04
|
|
|
$4.25
|
|
|
$4.04
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R099P7XKSA1
- Infineon Technologies
-
1:
$4.80
-
362En existencias
-
1,000Se espera el 9/7/2026
|
N.º de artículo de Mouser
726-IPA60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
362En existencias
1,000Se espera el 9/7/2026
|
|
|
$4.80
|
|
|
$2.47
|
|
|
$2.25
|
|
|
$1.84
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA60R180P7SXKSA1
- Infineon Technologies
-
1:
$2.34
-
1,376En existencias
|
N.º de artículo de Mouser
726-IPA60R180P7SXKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,376En existencias
|
|
|
$2.34
|
|
|
$1.14
|
|
|
$0.955
|
|
|
$0.784
|
|
|
Ver
|
|
|
$0.689
|
|
|
$0.68
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPA60R180P7XKSA1
- Infineon Technologies
-
1:
$3.10
-
587En existencias
|
N.º de artículo de Mouser
726-IPA60R180P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
587En existencias
|
|
|
$3.10
|
|
|
$1.54
|
|
|
$1.39
|
|
|
$1.15
|
|
|
$1.00
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA60R280P7XKSA1
- Infineon Technologies
-
1:
$2.64
-
700En existencias
|
N.º de artículo de Mouser
726-IPA60R280P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
700En existencias
|
|
|
$2.64
|
|
|
$1.53
|
|
|
$1.17
|
|
|
$0.99
|
|
|
$0.788
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA60R360P7SXKSA1
- Infineon Technologies
-
1:
$1.80
-
1,214En existencias
|
N.º de artículo de Mouser
726-IPA60R360P7SXKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,214En existencias
|
|
|
$1.80
|
|
|
$0.856
|
|
|
$0.764
|
|
|
$0.601
|
|
|
Ver
|
|
|
$0.506
|
|
|
$0.473
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
300 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 40 C
|
+ 150 C
|
22 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA60R360P7XKSA1
- Infineon Technologies
-
1:
$2.23
-
805En existencias
|
N.º de artículo de Mouser
726-IPA60R360P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
805En existencias
|
|
|
$2.23
|
|
|
$1.08
|
|
|
$0.874
|
|
|
$0.783
|
|
|
Ver
|
|
|
$0.65
|
|
|
$0.636
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
300 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
22 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPD60R280P7ATMA1
- Infineon Technologies
-
1:
$2.22
-
606En existencias
-
2,500En pedido
|
N.º de artículo de Mouser
726-IPD60R280P7ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
606En existencias
2,500En pedido
|
|
|
$2.22
|
|
|
$1.42
|
|
|
$0.961
|
|
|
$0.764
|
|
|
$0.701
|
|
|
$0.632
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R360P7SAUMA1
- Infineon Technologies
-
1:
$1.38
-
141En existencias
-
17,500En pedido
|
N.º de artículo de Mouser
726-IPD60R360P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
141En existencias
17,500En pedido
Existencias:
141 Se puede enviar inmediatamente
En pedido:
2,500 Se espera el 1/10/2026
10,000 Se espera el 26/10/2026
5,000 Se espera el 31/12/2026
Plazo de entrega de fábrica:
23 Semanas
|
|
|
$1.38
|
|
|
$0.871
|
|
|
$0.575
|
|
|
$0.448
|
|
|
$0.362
|
|
|
Ver
|
|
|
$0.408
|
|
|
$0.329
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
300 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 40 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN60R360P7SATMA1
- Infineon Technologies
-
1:
$1.38
-
1,504En existencias
-
12,000Se espera el 31/8/2026
|
N.º de artículo de Mouser
726-IPN60R360P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,504En existencias
12,000Se espera el 31/8/2026
|
|
|
$1.38
|
|
|
$0.865
|
|
|
$0.572
|
|
|
$0.445
|
|
|
$0.352
|
|
|
Ver
|
|
|
$0.405
|
|
|
$0.326
|
|
|
$0.32
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
300 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 40 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R099P7XKSA1
- Infineon Technologies
-
1:
$4.78
-
131En existencias
-
500Se espera el 28/9/2026
|
N.º de artículo de Mouser
726-IPP60R099P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
131En existencias
500Se espera el 28/9/2026
|
|
|
$4.78
|
|
|
$2.47
|
|
|
$2.24
|
|
|
$1.84
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R120P7XKSA1
- Infineon Technologies
-
1:
$4.13
-
524En existencias
|
N.º de artículo de Mouser
726-IPP60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
524En existencias
|
|
|
$4.13
|
|
|
$2.10
|
|
|
$1.91
|
|
|
$1.70
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP60R280P7XKSA1
- Infineon Technologies
-
1:
$2.60
-
136En existencias
-
500Se espera el 24/9/2026
|
N.º de artículo de Mouser
726-IPP60R280P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
136En existencias
500Se espera el 24/9/2026
|
|
|
$2.60
|
|
|
$1.28
|
|
|
$1.17
|
|
|
$0.914
|
|
|
$0.785
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R037P7XKSA1
- Infineon Technologies
-
1:
$10.15
-
30En existencias
-
7,920En pedido
|
N.º de artículo de Mouser
726-IPW60R037P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
30En existencias
7,920En pedido
Existencias:
30 Se puede enviar inmediatamente
En pedido:
240 Se espera el 1/6/2026
7,680 Se espera el 1/7/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$10.15
|
|
|
$6.51
|
|
|
$5.43
|
|
|
$4.91
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R060P7XKSA1
- Infineon Technologies
-
1:
$8.30
-
849En existencias
|
N.º de artículo de Mouser
726-IPW60R060P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
849En existencias
|
|
|
$8.30
|
|
|
$5.45
|
|
|
$4.47
|
|
|
$3.92
|
|
|
$3.51
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
- 20 V, 20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R120P7XKSA1
- Infineon Technologies
-
1:
$5.08
-
317En existencias
|
N.º de artículo de Mouser
726-IPW60R120P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
317En existencias
|
|
|
$5.08
|
|
|
$3.31
|
|
|
$2.44
|
|
|
$2.02
|
|
|
Ver
|
|
|
$2.01
|
|
|
$1.88
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPZA60R037P7XKSA1
- Infineon Technologies
-
1:
$11.48
-
114En existencias
-
240Se espera el 9/7/2026
|
N.º de artículo de Mouser
726-IPZA60R037P7XKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
114En existencias
240Se espera el 9/7/2026
|
|
|
$11.48
|
|
|
$6.84
|
|
|
$5.82
|
|
|
$5.77
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
- 20 V, 20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|