|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Power Trench MOSFET
- FDBL86366-F085
- onsemi
-
1:
$4.22
-
2,692En existencias
|
N.º de artículo de Mouser
512-FDBL86366_F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Power Trench MOSFET
|
|
2,692En existencias
|
|
|
$4.22
|
|
|
$2.78
|
|
|
$1.96
|
|
|
$1.79
|
|
|
$1.68
|
|
|
$1.67
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
TO-LL8-8
|
N-Channel
|
1 Channel
|
80 V
|
220 A
|
6.1 mOhms
|
- 20 V, 20 V
|
2 V
|
86 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 240A TO-LL N-Chnl PowerTrench
- FDBL86563-F085
- onsemi
-
1:
$5.05
-
3,440En existencias
|
N.º de artículo de Mouser
512-FDBL86563_F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 240A TO-LL N-Chnl PowerTrench
|
|
3,440En existencias
|
|
|
$5.05
|
|
|
$4.02
|
|
|
$2.93
|
|
|
$2.90
|
|
|
$2.71
|
|
|
$2.71
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
TO-LL8-8
|
N-Channel
|
1 Channel
|
60 V
|
240 A
|
2.9 mOhms
|
- 20 V, 20 V
|
2 V
|
130 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Power Trench MOSFET
- FDBL86363-F085
- onsemi
-
1:
$5.38
-
3,965En existencias
|
N.º de artículo de Mouser
512-FDBL86363_F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Power Trench MOSFET
|
|
3,965En existencias
|
|
|
$5.38
|
|
|
$3.59
|
|
|
$2.57
|
|
|
$2.48
|
|
|
$2.31
|
|
|
$2.31
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
TO-LL8-8
|
N-Channel
|
1 Channel
|
80 V
|
240 A
|
2 mOhms
|
- 20 V, 20 V
|
2 V
|
130 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 100A, 2.6mO, DPAK N-Channel PowerTrench
- FDD86567-F085
- onsemi
-
1:
$3.14
-
2,646En existencias
|
N.º de artículo de Mouser
512-FDD86567_F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 100A, 2.6mO, DPAK<BR>N-Channel PowerTrench
|
|
2,646En existencias
|
|
|
$3.14
|
|
|
$2.04
|
|
|
$1.42
|
|
|
$1.20
|
|
|
$1.19
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
6 mOhms
|
- 20 V, 20 V
|
2 V
|
63 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 80V, 300A, 1.1 mO, TO-LL N-Channel PowerTrench
- FDBL86361-F085
- onsemi
-
1:
$6.70
-
6,280En existencias
-
4,000Se espera el 26/6/2026
|
N.º de artículo de Mouser
512-FDBL86361F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 80V, 300A, 1.1 mO, TO-LL<BR>N-Channel PowerTrench
|
|
6,280En existencias
4,000Se espera el 26/6/2026
|
|
|
$6.70
|
|
|
$4.52
|
|
|
$3.32
|
|
|
$3.26
|
|
|
$3.10
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
TO-LL8-8
|
N-Channel
|
1 Channel
|
80 V
|
300 A
|
1.1 mOhms
|
- 20 V, 20 V
|
2 V
|
172 nC
|
- 55 C
|
+ 175 C
|
429 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 110A, 1.6mO, D2PAK N-Channel PowerTrench
- FDB86563-F085
- onsemi
-
1:
$5.43
-
3,760En existencias
|
N.º de artículo de Mouser
512-FDB86563_F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 110A, 1.6mO, D2PAK<BR> N-Channel PowerTrench
|
|
3,760En existencias
|
|
|
$5.43
|
|
|
$3.61
|
|
|
$2.58
|
|
|
$2.47
|
|
|
$2.47
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
Si
|
SMD/SMT
|
D2PAK-2
|
N-Channel
|
1 Channel
|
60 V
|
110 A
|
3.2 mOhms
|
- 20 V, 20 V
|
2 V
|
126 nC
|
- 55 C
|
+ 175 C
|
333 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch Power Trench MOSFET 150V 169A
- FDBL86210-F085
- onsemi
-
1:
$6.70
-
4,008En existencias
|
N.º de artículo de Mouser
512-FDBL86210_F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch Power Trench MOSFET 150V 169A
|
|
4,008En existencias
|
|
|
$6.70
|
|
|
$4.52
|
|
|
$3.32
|
|
|
$3.10
|
|
|
$3.10
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
TO-LL8-8
|
N-Channel
|
1 Channel
|
150 V
|
169 A
|
5 mOhms
|
- 20 V, 20 V
|
2.8 V
|
70 nC
|
- 55 C
|
+ 175 C
|
500 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 300A, 0.85mO, TO-LL N-Channel PowerTrench
- FDBL86561-F085
- onsemi
-
1:
$6.29
-
2,097En existencias
-
2,000Se espera el 27/5/2026
|
N.º de artículo de Mouser
512-FDBL86561F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 300A, 0.85mO, TO-LL<BR> N-Channel PowerTrench
|
|
2,097En existencias
2,000Se espera el 27/5/2026
|
|
|
$6.29
|
|
|
$4.23
|
|
|
$3.06
|
|
|
$3.05
|
|
|
$2.85
|
|
|
$2.85
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
TO-LL8-8
|
N-Channel
|
1 Channel
|
60 V
|
300 A
|
2.2 mOhms
|
- 20 V, 20 V
|
2 V
|
170 nC
|
- 55 C
|
+ 175 C
|
429 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans N-Ch 60V 50 A 3-Pin 2+Tab
- FDD13AN06A0-F085
- onsemi
-
1:
$2.16
-
10,672En existencias
|
N.º de artículo de Mouser
512-FDD13AN06A0-F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans N-Ch 60V 50 A 3-Pin 2+Tab
|
|
10,672En existencias
|
|
|
$2.16
|
|
|
$1.39
|
|
|
$0.939
|
|
|
$0.749
|
|
|
$0.704
|
|
|
Ver
|
|
|
$0.716
|
|
|
$0.669
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
13.5 mOhms
|
- 20 V, 20 V
|
2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
115 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MV7 80/20V1000A N-CH PowerTrench MOSFET
- FDD86367-F085
- onsemi
-
1:
$2.91
-
3,201En existencias
|
N.º de artículo de Mouser
512-FDD86367_F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MV7 80/20V1000A N-CH PowerTrench MOSFET
|
|
3,201En existencias
|
|
|
$2.91
|
|
|
$1.85
|
|
|
$1.31
|
|
|
$1.08
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
8.4 mOhms
|
- 20 V, 20 V
|
2 V
|
68 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 80V 90A Dual DPAK N-Chnl PowerTrench
- FDD86369-F085
- onsemi
-
1:
$2.24
-
3,939En existencias
|
N.º de artículo de Mouser
512-FDD86369_F085
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 80V 90A Dual DPAK N-Chnl PowerTrench
|
|
3,939En existencias
|
|
|
$2.24
|
|
|
$1.44
|
|
|
$0.974
|
|
|
$0.778
|
|
|
$0.75
|
|
|
$0.70
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
80 V
|
90 A
|
17.4 mOhms
|
- 20 V, 20 V
|
2 V
|
34 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel Power Trench MOSFET
- FDD9409-F085
- onsemi
-
1:
$2.44
-
1,162En existencias
-
NRND
|
N.º de artículo de Mouser
512-FDD9409_F085
NRND
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel Power Trench MOSFET
|
|
1,162En existencias
|
|
|
$2.44
|
|
|
$1.59
|
|
|
$1.09
|
|
|
$0.87
|
|
|
$0.832
|
|
|
$0.832
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
90 A
|
3.2 mOhms
|
- 20 V, 20 V
|
3.2 V
|
42 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans MOS N-Ch 60V 1.7A
- FDN5632N-F085
- onsemi
-
1:
$1.04
-
13,053En existencias
-
159,000En pedido
-
NRND
|
N.º de artículo de Mouser
512-FDN5632N-F085
NRND
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans MOS N-Ch 60V 1.7A
|
|
13,053En existencias
159,000En pedido
Existencias:
13,053 Se puede enviar inmediatamente
En pedido:
60,000 Se espera el 21/7/2026
99,000 Se espera el 10/8/2026
Plazo de entrega de fábrica:
23 Semanas
|
|
|
$1.04
|
|
|
$0.65
|
|
|
$0.426
|
|
|
$0.324
|
|
|
$0.297
|
|
|
$0.245
|
|
Min.: 1
Mult.: 1
Máx.: 9,000
:
3,000
|
|
|
Si
|
SMD/SMT
|
SSOT-3
|
N-Channel
|
1 Channel
|
60 V
|
1.6 A
|
98 mOhms
|
- 20 V, 20 V
|
1 V
|
12 nC
|
- 55 C
|
+ 150 C
|
1.1 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans N-Ch 60V 4.3A
- FDC5661N-F085
- onsemi
-
1:
$0.93
-
694En existencias
-
24,000En pedido
-
NRND
|
N.º de artículo de Mouser
512-FDC5661N-F085
NRND
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans N-Ch 60V 4.3A
|
|
694En existencias
24,000En pedido
Existencias:
694 Se puede enviar inmediatamente
En pedido:
12,000 Se espera el 15/1/2027
Plazo de entrega de fábrica:
24 Semanas
|
|
|
$0.93
|
|
|
$0.577
|
|
|
$0.376
|
|
|
$0.289
|
|
|
$0.261
|
|
|
$0.224
|
|
Min.: 1
Mult.: 1
Máx.: 3,000
:
3,000
|
|
|
Si
|
SMD/SMT
|
SSOT-6
|
N-Channel
|
1 Channel
|
60 V
|
4.3 A
|
47 mOhms
|
- 20 V, 20 V
|
1 V
|
19 nC
|
- 55 C
|
+ 150 C
|
1.6 W
|
Enhancement
|
AEC-Q101
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|