|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPA030N10NF2SXKSA1
- Infineon Technologies
-
1:
$4.82
-
2,048En existencias
|
N.º de artículo de Mouser
726-IPA030N10NF2SXKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
2,048En existencias
|
|
|
$4.82
|
|
|
$2.48
|
|
|
$2.32
|
|
|
$1.69
|
|
|
Ver
|
|
|
$1.67
|
|
|
$1.62
|
|
|
$1.59
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
100 V
|
83 A
|
3 mOhms
|
- 20 V, 20 V
|
3 V
|
154 nC
|
- 55 C
|
+ 175 C
|
41 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
- IPP024N08NF2SAKMA1
- Infineon Technologies
-
1:
$3.86
-
904En existencias
|
N.º de artículo de Mouser
726-IPP024N08NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
|
|
904En existencias
|
|
|
$3.86
|
|
|
$1.95
|
|
|
$1.81
|
|
|
$1.50
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
182 A
|
2.4 mOhms
|
- 20 V, 20 V
|
3.8 V
|
89 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPP082N10NF2SAKMA1
- Infineon Technologies
-
1:
$1.96
-
1,866En existencias
|
N.º de artículo de Mouser
726-IPP082N10NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
1,866En existencias
|
|
|
$1.96
|
|
|
$1.18
|
|
|
$0.936
|
|
|
$0.783
|
|
|
Ver
|
|
|
$0.715
|
|
|
$0.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
100 V
|
77 A
|
8.2 mOhms
|
- 20 V, 20 V
|
3.8 V
|
28 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- IPP011N04NF2SAKMA1
- Infineon Technologies
-
1:
$3.76
-
3,508En existencias
|
N.º de artículo de Mouser
726-IPP011N04NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
3,508En existencias
|
|
|
$3.76
|
|
|
$1.94
|
|
|
$1.67
|
|
|
$1.42
|
|
|
Ver
|
|
|
$1.41
|
|
|
$1.34
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
40 V
|
201 A
|
1.15 mOhms
|
- 20 V, 20 V
|
3.4 V
|
210 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPP019N06NF2SAKMA1
- Infineon Technologies
-
1:
$2.88
-
8,709En existencias
|
N.º de artículo de Mouser
726-P019N06NF2SAKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
8,709En existencias
|
|
|
$2.88
|
|
|
$1.43
|
|
|
$1.28
|
|
|
$1.03
|
|
|
Ver
|
|
|
$0.968
|
|
|
$0.934
|
|
|
$0.904
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
185 A
|
1.9 mOhms
|
- 20 V, 20 V
|
2.1 V
|
108 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPP016N06NF2SAKMA1
- Infineon Technologies
-
1:
$2.87
-
919En existencias
-
1,000Se espera el 11/6/2026
|
N.º de artículo de Mouser
726-P016N06NF2SAKMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
919En existencias
1,000Se espera el 11/6/2026
|
|
|
$2.87
|
|
|
$1.42
|
|
|
$1.28
|
|
|
$1.03
|
|
|
$0.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
194 A
|
1.6 mOhms
|
- 20 V, 20 V
|
2.1 V
|
155 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
- IPP019N08NF2SAKMA1
- Infineon Technologies
-
1:
$3.88
-
1,154En existencias
|
N.º de artículo de Mouser
726-IPP019N08NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
|
|
1,154En existencias
|
|
|
$3.88
|
|
|
$1.88
|
|
|
$1.63
|
|
|
$1.44
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
191 A
|
1.9 mOhms
|
- 20 V, 20 V
|
3.8 V
|
124 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPP014N06NF2SAKMA2
- Infineon Technologies
-
1:
$5.01
-
77En existencias
-
1,000Se espera el 26/5/2026
|
N.º de artículo de Mouser
726-P014N06NF2SAKMA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
77En existencias
1,000Se espera el 26/5/2026
|
|
|
$5.01
|
|
|
$2.59
|
|
|
$2.36
|
|
|
$1.95
|
|
|
$1.92
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
198 A
|
1.4 mOhms
|
- 20 V, 20 V
|
2.1 V
|
203 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPP026N10NF2SAKMA1
- Infineon Technologies
-
1:
$4.89
-
1,638En existencias
|
N.º de artículo de Mouser
726-IPP026N10NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
1,638En existencias
|
|
|
$4.89
|
|
|
$2.53
|
|
|
$2.30
|
|
|
$1.90
|
|
|
$1.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
100 V
|
184 A
|
2.6 mOhms
|
- 20 V, 20 V
|
3.8 V
|
103 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
- IPP055N08NF2SAKMA1
- Infineon Technologies
-
1:
$2.76
-
3,000En existencias
|
N.º de artículo de Mouser
726-IPP055N08NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
|
|
3,000En existencias
|
|
|
$2.76
|
|
|
$1.36
|
|
|
$1.22
|
|
|
$0.977
|
|
|
Ver
|
|
|
$0.946
|
|
|
$0.895
|
|
|
$0.765
|
|
|
$0.743
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
80 V
|
99 A
|
5.5 mOhms
|
- 20 V, 20 V
|
3.8 V
|
36 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPA082N10NF2SXKSA1
- Infineon Technologies
-
1:
$2.45
-
544En existencias
|
N.º de artículo de Mouser
726-IPA082N10NF2SXKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
544En existencias
|
|
|
$2.45
|
|
|
$1.19
|
|
|
$1.09
|
|
|
$0.893
|
|
|
Ver
|
|
|
$0.725
|
|
|
$0.722
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
100 V
|
46 A
|
8.2 mOhms
|
- 20 V, 20 V
|
3.8 V
|
42 nC
|
- 55 C
|
+ 175 C
|
35 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- IPP015N04NF2SAKMA1
- Infineon Technologies
-
1:
$2.74
-
99En existencias
-
5,000Se espera el 11/6/2026
|
N.º de artículo de Mouser
726-IPP015N04NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
99En existencias
5,000Se espera el 11/6/2026
|
|
|
$2.74
|
|
|
$1.35
|
|
|
$1.21
|
|
|
$0.972
|
|
|
Ver
|
|
|
$0.894
|
|
|
$0.844
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
40 V
|
193 A
|
1.5 mOhms
|
- 20 V, 20 V
|
3.4 V
|
106 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPP030N06NF2SAKMA1
- Infineon Technologies
-
1:
$2.02
-
1,595En existencias
|
N.º de artículo de Mouser
726-IPP030N06NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
1,595En existencias
|
|
|
$2.02
|
|
|
$0.971
|
|
|
$0.868
|
|
|
$0.688
|
|
|
Ver
|
|
|
$0.656
|
|
|
$0.565
|
|
|
$0.556
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
119 A
|
3.05 mOhms
|
- 20 V, 20 V
|
3.3 V
|
68 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
- IPP040N08NF2SAKMA1
- Infineon Technologies
-
1:
$3.26
-
1,091En existencias
|
N.º de artículo de Mouser
726-IPP040N08NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
|
|
1,091En existencias
|
|
|
$3.26
|
|
|
$1.63
|
|
|
$1.50
|
|
|
$1.24
|
|
|
Ver
|
|
|
$1.14
|
|
|
$1.08
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
80 V
|
115 A
|
4 mOhms
|
- 20 V, 20 V
|
3.8 V
|
54 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPP129N10NF2SAKMA1
- Infineon Technologies
-
1:
$2.06
-
931En existencias
|
N.º de artículo de Mouser
726-IPP129N10NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
931En existencias
|
|
|
$2.06
|
|
|
$0.991
|
|
|
$0.886
|
|
|
$0.703
|
|
|
Ver
|
|
|
$0.643
|
|
|
$0.593
|
|
|
$0.571
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
100 V
|
52 A
|
12.9 mOhms
|
- 20 V, 20 V
|
3.8 V
|
19 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPP040N06NF2SAKMA1
- Infineon Technologies
-
1:
$1.98
-
2,195En existencias
|
N.º de artículo de Mouser
726-IPP040N06NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
2,195En existencias
|
|
|
$1.98
|
|
|
$0.95
|
|
|
$0.849
|
|
|
$0.672
|
|
|
Ver
|
|
|
$0.614
|
|
|
$0.582
|
|
|
$0.541
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
80 A
|
4 mOhms
|
- 20 V, 20 V
|
3.3 V
|
38 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPP050N10NF2SAKMA1
- Infineon Technologies
-
1:
$2.96
-
967En existencias
-
1,000Se espera el 26/5/2026
|
N.º de artículo de Mouser
726-IPP050N10NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
967En existencias
1,000Se espera el 26/5/2026
|
|
|
$2.96
|
|
|
$1.48
|
|
|
$1.33
|
|
|
$1.08
|
|
|
Ver
|
|
|
$0.971
|
|
|
$0.935
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
100 V
|
110 A
|
5 mOhms
|
- 20 V, 20 V
|
3.8 V
|
51 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- IPP013N04NF2SAKMA1
- Infineon Technologies
-
1:
$3.37
-
2,000En existencias
-
3,000Se espera el 28/5/2026
|
N.º de artículo de Mouser
726-IPP013N04NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
2,000En existencias
3,000Se espera el 28/5/2026
|
|
|
$3.37
|
|
|
$1.69
|
|
|
$1.40
|
|
|
$1.13
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
40 V
|
197 A
|
1.3 mOhms
|
- 20 V, 20 V
|
3.4 V
|
159 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
- IPP016N08NF2SAKMA1
- Infineon Technologies
-
1:
$4.50
-
2,000Se espera el 5/11/2026
|
N.º de artículo de Mouser
726-IPP016N08NF2SAKM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
|
|
2,000Se espera el 5/11/2026
|
|
|
$4.50
|
|
|
$2.32
|
|
|
$2.11
|
|
|
$1.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
80 V
|
196 A
|
1.6 mOhms
|
- 20 V, 20 V
|
3.8 V
|
170 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
Tube
|
|