TK16E60W5,S1VX
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757-TK16E60W5S1VX
TK16E60W5,S1VX
Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Power MOSFET N-Channel
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Power MOSFET N-Channel
Hoja de datos:
Disponibilidad
-
Existencias:
-
No en existenciasSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
-
Plazo de entrega de fábrica:
-
20 Semanas Tiempo estimado de producción de fábrica.
Precio (USD)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| $4.68 | $4.68 | |
| $2.36 | $23.60 | |
| $2.16 | $216.00 | |
| $1.82 | $910.00 | |
| $1.74 | $1,740.00 |
Hoja de datos
Application Notes
- Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
- Basics of Diodes (Power Losses and Thermal Design)
- Basics of Diodes (Types and Overview of Diodes)
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors Maximum Ratings
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
