GT30N135SRA,S1E
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757-GT30N135SRAS1E
GT30N135SRA,S1E
Fabricante:
Descripción:
IGBTs 1350V DISCRETE IGBT TRANS
IGBTs 1350V DISCRETE IGBT TRANS
Hoja de datos:
En existencias: 3,448
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Existencias:
-
3,448 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
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Plazo de entrega de fábrica:
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26 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Precio (USD)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| $4.27 | $4.27 | |
| $2.56 | $25.60 | |
| $2.26 | $226.00 | |
| $2.25 | $1,125.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 30) | ||
| $2.56 | $76.80 | |
Hoja de datos
Application Notes
- IGBT (Insulated Gate Bipolar Transistor)
- IGBT for Voltage-Resonant Inverters: GT20N135SRA
- Improving the Load Transient Response of LDOs
- LDO Regulator Application to Power Supplies for High-Frequency Circuits
- LDO Regulator Application to Power Supply Circuits for Digital Cores of CMOS Image Sensors
- LDO Regulator Application to Power Supply Circuits for MCUs
- LDO Regulators Glossary
- Low Drop-Out (LDO) Regulator IC
- Measures against Radiation Noise
- Mechanism of LDO Oscillation and Reducing the Susceptibility to Oscillation
- Power Efficiency Optimization
- Simple Guide to Improving Ripple Rejection Ratio of LDO Regulators
- Thermal Design to Maximize the Performance of LDO Regulators
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
