LSIC2SD120N40PA

Littelfuse
576-LSIC2SD120N40PA
LSIC2SD120N40PA

Fabricante:

Descripción:
Diodos Schottky de SiC RECT 1.2KV 40A SM SCHOTTKY

Modelo ECAD:
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En existencias: 74

Existencias:
74 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
29 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$22.42 $22.42
$16.34 $163.40
$13.23 $1,323.00

Atributo del producto Valor de atributo Seleccionar atributo
Littelfuse
Categoría de producto: Diodos Schottky de SiC
RoHS:  
Screw Mount
SOT-227B
Dual Series
40 A
1.2 kV
1.8 V
145 A
100 uA
- 55 C
+ 175 C
LSIC2SD
Tube
Marca: Littelfuse
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 100
Subcategoría: Diodes & Rectifiers
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USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.

LSIC2SD GEN2 SiC Schottky Diodes

Littelfuse LSIC2SD GEN2 Silicon Carbide (SiC) Schottky Diodes provide improved efficiency, reliability, and thermal management in various applications. The diodes have an operating junction temperature of +175°C maximum. The positive temperature coefficient of the diodes supports safe operation and ease of paralleling. Other features of the Littelfuse LSIC2SD GEN2 SiC Schottky Diodes include high-surge capability and negligible reverse recovery current. The switching behavior of the diodes is extremely fast and temperature-independent. Compared to Si bipolar diodes, these diodes provide dramatically reduced switching losses. LSIC2SD GEN2 SiC Schottky Diodes are ideal for EV charging stations, solar inverters, switch-mode power supplies, and more. These diodes are available in a variety of packages and voltage/current ratings, including 650V (6A to 40A) and 1200V (5A to 40A).